PART |
Description |
Maker |
NSB1010XV5T5 NSB1010XV5 |
Dual Digital Transistor Dual Common Base−Collector Bias Resistor Transistors
|
ONSEMI[ON Semiconductor]
|
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
EMC4DXV5T5G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
2SC945 |
Collector current up to 150mA High hFE linearity Collector to base voltage VCBO 60 V
|
TY Semiconductor Co., L...
|
2SC3547B E000855 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR APPLICATIONS)(COMMON COLLECTOR) From old datasheet system TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON COLLECTOR)
|
Toshiba Semiconductor
|
2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base)
|
TOSHIBA
|
2SC5026 |
Silicon NPN Epitaxial Planar Type Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor TY Semiconductor Co., Ltd
|
S8050 |
Collector-base breakdown voltage
|
TY Semiconductor Co., Ltd
|